| PART |
Description |
Maker |
| MAR6401 |
P-Channel High Density Trench
|
Hope Microelectronics co., Ltd
|
| STP4435A |
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4403 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4546 |
STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ISPLSI2032VE ISPLSI2032VE-110LB49 ISPLSI2032VE-110 |
225 MHz 3.3V in-system prommable superFAST high density PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
3.3V In-System Programmable High Density SuperFAST?/a> PLD
3.3V In-System Programmable High Density SuperFAST⑩ PLD
3.3V In-System Programmable High Density SuperFAST PLD
IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4
IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.3
IC,Normally-Closed Panel-Mount Solid-State Relay,1-CHANNEL,M:HL048HD4.4 EE PLD, 13 ns, PQCC44
3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 13 ns, PQFP44
3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 6 ns, PQCC44
3.3V In-System Programmable High Density SuperFASTPLD 3.3在系统可编程高密度PLD的超快⑩
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| STP80N03L-06 4881 |
N-Channel Enhancement Mode "Ultra High Density" Power MOS Transistor(Ｎ沟道增强模式高密度功率ＭＯＳ晶体管) N沟道增强模式“超高密度”功率MOS晶体管（不适用沟道增强模式高密度功率马鞍山晶体管）
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| V10P45-M386A V10P45-87A V10P45-86A |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V8P10-M3_86A V8P10-M3_87A V8P10-M3/87A V8P10-M3/86 |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V10PL45-M3/86A V10PL45-M3/87A |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V12P12HM3-86A V12P12-M3-86A V12P12-M3-87A |
High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
